High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics
نویسندگان
چکیده
High-performance inversion-type enhancement-mod nchannel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm shows a maximum drain current of 430 mA/mm and a transconductance of 160 mA/mm at drain voltage of 2 V. The transconductance is improved to 180 mA/mm by implementing HfO2 or HfAlO as gate dielectrics with the same oxide thickness. The peak effective mobility is ~1200 cm/Vs from dc measurement, ~ 4000 cm/Vs after interface trap correction for HfO2/In0.53Ga0.47As NMOSFETs.
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